4.0 amps single phase full wave bridge rectifier i o(av) = 4a v rrm = 50/ 800v 4gbl series 1 bulletin i2716 rev. f 06/03 www.irf.com description these gbl series of single phase bridges consist of four glass passivated silicon junction connected as a full wave bridge. these four junctions are encapsulated by plastic molding technique. these bridges are mainly used in switch mode power supply and in industrial and consumer equipment. parameters 4gbl units major ratings and characteristics i o 4a @ t c 50 c i fsm @ 50hz 150 a @ 60hz 158 a i 2 t @ 50hz 113 a 2 s @ 60hz 104 a 2 s v rrm range 50 to 800 v t j - 55 to 150 o c 4gbl features diode chips are glass passivated easy to assemble & install on p.c.b. high surge current capability high isolation between terminals and molded case (1500 v rms ) lead free terminals solderable as per mil-std-750 method 2026 terminals suitable for high temperature soldering at 260c for 8-10 secs ul e160375 approved
4gbl series 2 bulletin i2716 rev. f 06/03 www.irf.com i o maximum dc output current 4 a t c = 50c, resistive & inductive load 3.2 t c = 50c, capacitive load i fsm maximum peak, one-cycle 150 t = 10ms, 20ms non-repetitive surge current, following any rated load condition 158 t = 8.3ms, 16.7ms t j = 150c and with rated v rrm reapplied i 2 t maximum i 2 t for fusing, 113 a 2 s t = 10ms initial t j = t j max 104 t = 8.3ms v fm maximum peak forward voltage 0.975 v t j = 25 o c, i fm = 4a per diode i rm typical peak reverse leakage 5 a t j = 25 o c, 100% v rrm curren t per diode v rrm maximum repetitive peak 50 to 800 v reverse voltage range forward conduction voltage v rrm , max repetitive v rms , maximum v rsm , max non-repetitive i rrm max. i rrm max. type number code peak rev. voltage rms voltage reverse voltage @ rated v rrm @ rated v rrm t j = t j max. t j = t j max. t j = t j max. t j = 25c t j = 150c vv vaa 4gbl 005 50 35 75 5 400 01 100 70 150 5 400 02 200 140 275 5 400 04 400 280 500 5 400 06 600 420 725 5 400 08 800 560 900 5 400 electrical specifications voltage ratings parameters 4gbl unit c onditions t j operating and storage -55 to 150 o c t stg temperature range r thjc max. thermal resistance 6.5 c/ w dc rated current through bridge (1) junction to case r thja thermal resistance, 22 c/ w dc rated current through bridge (1) junction to ambient w approximate weight 2 (0.07) g (oz) thermal and mechanical specifications parameters 4gbl unit c onditions note (1): devices mounted on 75 x 75 x 3 mm aluminum plate
4gbl series 3 bulletin i2716 rev. f 06/03 www.irf.com 1 - bridge current 2 - basic part number 3 - voltage code: code x 100 = v rrm 4 gbl 08 1 2 3 ordering information table device code outline table all dimensions are in millimetres
4gbl series 4 bulletin i2716 rev. f 06/03 www.irf.com fig. 2 - forward voltage drop characteristics fig. 1 - current ratings characteristics fig. 4 - maximum non-repetitive surge current instantaneous forward voltage (v) instantaneous forward current (a) maximum allowable case temperature (c) average forward current (a) number of equal amplitude half cycle current pulses (n) peak half sine wave forward current (a) fig. 3 - total power loss characteristics maximum average forward power loss (w) average forward current (a) 20 40 60 80 100 120 140 160 012345 180 ? (sine) 180 ? (rect) 4gbl series 40 60 80 100 120 140 160 1 10 100 at any rated load condition and with rated vrrm applied following surge. initial tj = 150 ? c @ 60 hz 0.0083 s @ 50 hz 0.0100 s 4gbl series 0.1 1 10 100 1000 0 0.5 1 1.5 2 2.5 3 3.5 t = 25 ? c j t = 150 ? c j 4gbl series 0 1 2 3 4 5 6 7 01234 180 ? (sine) 180 ? (rect) 4gbl series t = 150 ? c j
4gbl series 5 bulletin i2716 rev. f 06/03 www.irf.com ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7309 visit us at www.irf.com for sales contact information. 06/03 data and specifications subject to change without notice. this product has been designed and qualified for multiple level. qualification standards can be found on ir's web site.
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